D. Bonifazi, A. Salomon, O. Enger, F. Diederich, D. Cahen,
Adv. Mater. (Weinheim, Ger.) 2002, 14, 802-805
DOI: 10.1002/1521-4095(20020605)14:11<802::AID-ADMA802>3.0.CO;2-#
Abstract
Changing the electronic surface properties of GaAs and ZnO can be achieved by chemisorption of partial monolayers of C60 derivatives. This effect appears to depend on the way the C60 moiety is coupled to the semiconductor surface (see Figure), as shown by preliminary I–V investigations of (n-GaAs C60 derivative)/Au solid-state diodes.
